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AlGaInP : ウィキペディア英語版
Aluminium gallium indium phosphide

==Description==
Aluminium gallium indium phosphide (, also AlInGaP, InGaAlP, etc.) is a semiconductor material that provides a platform for the development of novel multi-junction photovoltaics and optoelectronic devices, as it spans a direct bandgap from deep ultraviolet to infrared.〔http://www.azom.com/article.aspx?ArticleID=8510

AlGaInP is used in manufacture of light-emitting diodes of high-brightness red, orange, green, and yellow color, to form the heterostructure emitting light. It is also used to make diode lasers.
AlGaInP layer is often grown by heteroepitaxy on gallium arsenide or gallium phosphide in order to form a quantum well structure.

抄文引用元・出典: フリー百科事典『 ウィキペディア(Wikipedia)
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