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BCDMOS : ウィキペディア英語版
BCDMOS
''BCDMOS'' is a complex circuit composed of Bipolar, CMOS and LDMOS devices.
Breakdown voltages can be as high as 750 V.〔(BCDMOS evolves to handle wide range of ultra-high-voltage applications. 2013 )〕
==Features==
According to Maxim website, it is an innovative process characteristics that provides the following features:
# high break-down voltage but small transistors,
# quite low on-resistance, which is important for the integration of multiple power FETs of low resistivity,
# double-metal-layer to support hi-current
# combining thin film and poly-poly caps (in silicon). High-accuracy references can be integrated.
According to Dongbu HiTek's news, it claims to launch the first 0.18-micrometre BCDMOS process in industry. The new process integrates logic, analog and hi-voltage functions to reduce size.

抄文引用元・出典: フリー百科事典『 ウィキペディア(Wikipedia)
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