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Field-effect transistor
The field-effect transistor (FET) is a transistor that uses an electric field to control the shape and hence the electrical conductivity of a channel of one type of charge carrier in a semiconductor material. FETs are also known as unipolar transistors as they involve single-carrier-type operation.
The FET has several forms, but all have high input impedance. While the conductivity of a non-FET transistor is regulated by the input current (the emitter to base current) and so has a low input impedance, a FET's conductivity is regulated by a voltage applied to a terminal (the gate) which is insulated from the device. The applied gate voltage imposes an electric field into the device, which in turn attracts or repels charge carriers to or from the region between a source terminal and a drain terminal. The density of charge carriers in turn influences the conductivity between the source and drain.
== History ==
(詳細はJulius Edgar Lilienfeld in 1926 and by Oskar Heil in 1934, but practical semiconducting devices (the JFET) were developed only much later after the transistor effect was observed and explained by the team of William Shockley at Bell Labs in 1947, immediately after the 20-year patent period eventually expired. The MOSFET, which largely superseded the JFET and had a profound effect on digital electronic development, was invented by Dawon Kahng and Martin Atalla in 1959.〔(1960 - Metal Oxide Semiconductor (MOS) Transistor Demonstrated - The Silicon Engine | Computer History Museum )〕
抄文引用元・出典: フリー百科事典『 ウィキペディア（Wikipedia）』
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