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Electromigration
Electromigration is the transport of material caused by the gradual movement of the ions in a conductor due to the momentum transfer between conducting electrons and diffusing metal atoms. The effect is important in applications where high direct current densities are used, such as in microelectronics and related structures. As the structure size in electronics such as integrated circuits (ICs) decreases, the practical significance of this effect increases.
== History ==
The phenomenon of electromigration has been known for over 100 years, having been discovered by the French scientist Gerardin.〔(【引用サイトリンク】title=IEEE Xplore Full-Text PDF: )〕 The topic first became of practical interest in 1966 when the first integrated circuits became commercially available. The first observation of electromigration in thin films was made by I. Blech.〔I. Blech: ''Electromigration in Thin Aluminum Films on Titanium Nitride.'' Journal of Applied Physics, Vol 47, pp. 1203-1208, April 1976.〕 Research in this field was pioneered by a number of investigators throughout the fledgling semiconductor industry. One of the most important engineering studies was performed by Jim Black of Motorola, after whom Black's equation is named.〔J.R. Black: ''Electromigration - A Brief Survey and Some Recent Results.'' IEEE Trans. on Electron Devices, Vol. ED-16 (No. 4), pp. 338-347, April 1969.〕 At the time, the metal interconnects in ICs were still about 10 micrometres wide. Currently interconnects are only hundreds to tens of nanometers in width, making research in electromigration increasingly important.
抄文引用元・出典: フリー百科事典『 ウィキペディア（Wikipedia）』
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