| 翻訳と辞書 |
Ferroelectric RAM
Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but uses a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile random-access memory technologies that offer the same functionality as flash memory. FeRAM advantages over flash include: lower power usage, faster write performance〔http://www.inovacaotecnologica.com.br/noticias/noticia.php?artigo=fetram-memoria-nao-volatil&id=010110110929〕 and a much greater maximum number of write-erase cycles (exceeding 1016 for 3.3 V devices). Disadvantages of FeRAM are much lower storage densities than flash devices, storage capacity limitations, and higher cost.
==History==
Ferroelectric RAM was proposed by MIT graduate student Dudley Allen Buck in his master's thesis, ''Ferroelectrics for Digital Information Storage and Switching,'' published in 1952.〔Dudley A. Buck, "Ferroelectrics for Digital Information Storage and Switching." Report R-212, MIT, June 1952.〕
Development of FeRAM began in the late 1980s. Work was done in 1991 at NASA's Jet Propulsion Laboratory on improving methods of read out, including a novel method of non-destructive readout using pulses of UV radiation.〔(Optically Addressed Ferroelectric Memory with Non-Destructive Read-Out )〕 Much of the current FeRAM technology was developed by Ramtron, a fabless semiconductor company. One major licensee is Fujitsu, who operates what is probably the largest semiconductor foundry production line with FeRAM capability. Since 1999 they have been using this line to produce standalone FeRAMs, as well as specialized chips (e.g. chips for smart cards) with embedded FeRAMs. Fujitsu produced devices for Ramtron until 2010. Since 2010 Ramtron's fabricators have been TI (Texas Instruments) and IBM. Since at least 2001 Texas Instruments has collaborated with Ramtron to develop FeRAM test chips in a modified 130 nm process. In the fall of 2005, Ramtron reported that they were evaluating prototype samples of an 8-megabit FeRAM manufactured using Texas Instruments' FeRAM process. Fujitsu and Seiko-Epson were in 2005 collaborating in the development of a 180 nm FeRAM process. In 2012 Ramtron was acquired by Cypress Semiconductor.〔http://www.bizjournals.com/denver/news/2012/11/21/cypress-semiconductor-completes.html〕
FeRAM research projects have also been reported at Samsung, Matsushita, Oki, Toshiba, Infineon, Hynix, Symetrix, Cambridge University, University of Toronto, and the Interuniversity Microelectronics Centre (IMEC, Belgium).
抄文引用元・出典: フリー百科事典『 ウィキペディア（Wikipedia）』
■ウィキペディアで「Ferroelectric RAM」の詳細全文を読む
スポンサード リンク
| 翻訳と辞書 : 翻訳のためのインターネットリソース |
Copyright(C) kotoba.ne.jp 1997-2016. All Rights Reserved.
|
|