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|Section2= |Section8= }} Isobutylgermane (IBGe, Chemical formula: (CH3)2CHCH2GeH3), is an organogermanium compound. It is a colourless, volatile liquid that is used in MOVPE (Metalorganic Vapor Phase Epitaxy) as an alternative to germane. IBGe is used in the deposition of Ge films and Ge-containing thin semiconductor films such as SiGe in strained silicon application, and GeSbTe in NAND Flash applications. ==Properties== IBGe is a non-pyrophoric liquid source for chemical vapor deposition (CVD) and atomic layer deposition (ALD) of semiconductors. It possesses very high vapor pressure and is considerably less hazardous than germane gas. IBGe also offers lower decomposition temperature (the onset of decomposition at ca. 325-350 °C).,〔(Safer alternative liquid germanium precursors for relaxed graded SiGe layers and strained silicon by MOVPE ); D.V. Shenai et al., ''Presentation at ICMOVPE-XIII, Miyazaki, Japan, June 1, 2006'', and publication in ''Journal of Crystal Growth'' (2007)〕 coupled with advantages of low carbon incorporation and reduced main group elemental impurities in epitaxially grown germanium comprising layers such as Ge, SiGe, SiGeC, strained silicon, GeSb, and GeSbTe. 抄文引用元・出典: フリー百科事典『 ウィキペディア（Wikipedia）』 ■ウィキペディアで「Isobutylgermane」の詳細全文を読む スポンサード リンク
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