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MODFET : ウィキペディア英語版
MODFET

The modulated-doping field effect transistor or modulation-doped field effect transistor (MODFET) is a type of a field-effect transistor, also known as the ''High Electron Mobility Transistor'' (HEMT). Like other FETs, MODFETs are used in integrated circuits as digital on-off switches. FETs can also be used as amplifiers for large amounts of current using a small voltage as a control signal. Both of these uses are made possible by the FET’s unique current-voltage characteristics.
== Manufacture ==
MODFETs can be manufactured by epitaxial growth of a strained SiGe layer. In the strained layer, the germanium content increases linearly to around 40-50%. This concentration of germanium allows the formation of a quantum well structure with a high conduction band offset and a high density of very mobile charge carriers. The end result is a FET with ultra-high switching speeds and low noise. InGaAs/AlGaAs, AlGaN/InGaN, and other compounds are also used in place of SiGe. InP and GaN are starting to replace SiGe as the base material in MODFETs because of their better noise and power ratios.

抄文引用元・出典: フリー百科事典『 ウィキペディア(Wikipedia)
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