翻訳と辞書 Words near each other ・ Multifuel ・ Multifunction Advanced Data Link ・ Multifunction cardiogram ・ Multifunction platform ・ Multifunction Polis ・ Multifunction tester ・ Multifunctional Information Distribution System ・ Multifunctional peptides ・ Multifunctional Utility/Logistics and Equipment vehicle ・ Multifunctionality in agriculture ・ MultiFunding ・ Multifurca ・ Multifurca furcata ・ Multifurca roxburghiae ・ Multifurca zonaria ・ Multigate device ・ Multigenre research paper ・ Multigrain bread ・ Multigraph ・ Multigraph (disambiguation) ・ Multigraph (orthography) ・ Multigrid method ・ Multigroup ・ Multihead weigher ・ Multihoming ・ Multihull ・ Multijurisdictional Counterdrug Task Force Training ・ Multikernel ・ Multikino ・ Multikulti Dictionary Lists mini英和辞書 mini和英辞書 Webster 1913 Latin-English FOLDOC Wikipedia English ウィキペディア

翻訳と辞書　辞書検索 [ 開発暫定版 ] スポンサード リンク Multigate device ： ウィキペディア英語版 Multigate device A multigate device or multiple gate field-effect transistor (MuGFET) refers to a MOSFET (metal–oxide–semiconductor field-effect transistor) which incorporates more than one gate into a single device. The multiple gates may be controlled by a single gate electrode, wherein the multiple gate surfaces act electrically as a single gate, or by independent gate electrodes. A multigate device employing independent gate electrodes is sometimes called a Multiple Independent Gate Field Effect Transistor (MIGFET). Multigate transistors are one of the several strategies being developed by CMOS semiconductor manufacturers to create ever-smaller microprocessors and memory cells, colloquially referred to as extending Moore's Law.〔Risch, L. "Pushing CMOS Beyond the Roadmap", Proceedings of ESSCIRC, 2005, p. 63〕 Development efforts into multigate transistors have been reported by AMD, Hitachi, IBM, Infineon Technologies, Intel Corporation, TSMC, Freescale Semiconductor, University of California, Berkeley and others and the ITRS predicted correctly that such devices will be the cornerstone of sub-32 nm technologies.〔(Table39b )〕 The primary roadblock to widespread implementation is manufacturability, as both planar and non-planar designs present significant challenges, especially with respect to lithography and patterning. Other complementary strategies for device scaling include channel strain engineering, silicon-on-insulator-based technologies, and high-k/metal gate materials. Dual gate MOSFETs are commonly used in VHF mixers and in sensitive VHF front end amplifiers. They are available from manufacturers such as Motorola, NXP, and Hitachi.〔(【引用サイトリンク】title=3N201 (Motorola) - Dual Gate Mosfet Vhf Amplifier )〕〔(【引用サイトリンク】title=BF1217WR )〕 ==Types== Dozens of multigate transistor variants may be found in the literature. In general, these variants may be differentiated and classified in terms of architecture (planar vs. non-planar design) and number of channels/gates (2, 3, or 4). 抄文引用元・出典: フリー百科事典『 ウィキペディア（Wikipedia）』 ■ウィキペディアで「Multigate device」の詳細全文を読む スポンサード リンク 翻訳と辞書 : 翻訳のためのインターネットリソース Copyright(C) kotoba.ne.jp 1997-2016. All Rights Reserved.