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Photoelectrowetting
Photoelectrowetting is a modification of the wetting properties of a surface (typically a hydrophobic surface) using incident light.〔(S. Arscott, 'Moving liquids with light: Photoelectrowetting on semiconductors', ''Sci. Rep.'' 1, 184, (2011). Scientific Reports: Nature Publishing Group. )〕 Whereas ordinary electrowetting is observed in surfaces consisting of a liquid/insulator/conductor stack, photoelectrowetting can be observed by replacing the conductor with a semiconductor to form a liquid/insulator/semiconductor stack. This has electrical and optical properties similar to the metal/insulator/semiconductor stack used in metal-oxide-semiconductor field effect transistors (MOSFETs) and charge-coupled devices (CCDs). Replacing the conductor with a semiconductor results in asymmetrical electrowetting behavior (in terms of voltage polarity), depending on the semiconductor doping type and density.
Incident light above the semiconductor's band gap creates photo-induced carriers via electron-hole pair generation in the depletion region of the underlying semiconductor. This leads to a modification of the capacitance of the insulator/semiconductor stack, resulting in a modification of the contact angle of a liquid droplet resting on the surface of the stack in a continuous way. The photoelectrowetting effect can be interpreted by a modification of the Young-Lippmann equation.
== See also ==
* Microfluidics
抄文引用元・出典: フリー百科事典『 ウィキペディア（Wikipedia）』
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