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Piezoresistive effect
The piezoresistive effect is a change in the electrical resistivity of a semiconductor or metal when mechanical strain is applied. In contrast to the piezoelectric effect, the piezoresistive effect causes a change only in electrical resistance, not in electric potential.
== History ==
The change of electrical resistance in metal devices due to an applied mechanical load was first discovered in 1856 by Lord Kelvin.
With single crystal silicon becoming the material of choice for the design of analog and digital circuits, the large piezoresistive effect in silicon and germanium was first discovered in 1954 (Smith 1954).
抄文引用元・出典: フリー百科事典『 ウィキペディア（Wikipedia）』
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