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RLDRAM
Reduced-latency Dynamic random access memory (RLDRAM) is a type of random access memory developed by Infineon Technologies AG in 1999. Infineon and Micron Technology, Inc. later agreed to jointly develop the device to guarantee a second source. RLDRAM memory is a low-latency, high-bandwidth DRAM designed for networking and L3 cache, high-end commercial graphics, and other applications that require back-to-back READ/WRITE operations or completely random access.〔(RLDRAM Memory: Unparalleled Bandwidth and Low Latency )〕 ==RLDRAM II==
抄文引用元・出典: フリー百科事典『 ウィキペディア(Wikipedia)』 ■ウィキペディアで「RLDRAM」の詳細全文を読む
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