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Silicon-tin : ウィキペディア英語版
Silicon-tin

Silicon-tin or SiSn, is in general a term used for an alloy of the form Si(1-x)Snx. The molecular ratio of tin in silicon can vary based on the fabrication methods or doping conditions. In general, SiSn is known to be intrinsically semiconducting, and even small amounts of Sn doping in silicon can also be used to create strain in the silicon lattice and alter the charge transport properties.
== Theoretical studies ==

Several theoretical works have shown SiSn to be semiconducting.
These mainly include DFT-based studies. The band structures obtained using these works show a change in band gap of silicon with the inclusion of tin into the silicon lattice. Thus, like SiGe, SiSn has a variable band gap that can be controlled using Sn concentration as a variable. In 2015, Hussain et al. experimentally verified the tuning of band gap associated with the diffusion of tin using homogenous, abrupt p-n junction diodes.

抄文引用元・出典: フリー百科事典『 ウィキペディア(Wikipedia)
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