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A VMOS transistor is a type of metal oxide semiconductor transistor. Vmos is also used for describing the V-groove shape vertically cut into the substrate material. ''VMOS'' is an acronym for "vertical metal oxide semiconductor", or "V-groove MOS".〔(VMOS—A new MOS integrated circuit technology. F.E. Holmes, C.A.T. Salama. 1974 )〕 The "V" shape of the MOSFET's gate allows the device to deliver a higher amount of current from the source to the drain of the device. The shape of the depletion region creates a wider channel, allowing more current to flow through it. This structure has a V-groove at the gate region and was used for the first commercial devices. The device's use was a power device until more suitable geometries, like the UMOS (or Trench-Gate MOS) were introduced in order to lower the maximum electric field at the top of the V shape and thus leading to higher maximum voltages than in case of the VMOS. VMOS was invented by T. J. Rodgers while he was a student at Stanford University. See T._J._Rodgers#Patents 1975-1980. ==References== 抄文引用元・出典: フリー百科事典『 ウィキペディア（Wikipedia）』 ■ウィキペディアで「VMOS」の詳細全文を読む スポンサード リンク
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