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|Section2= |Section3= |Section4= |Section5= }} Dichlorosilane, or DCS as it is commonly known, is a chemical compound with the formula H2SiCl2. In its major use, it is mixed with ammonia (NH3) in LPCVD chambers to grow silicon nitride in semiconductor processing. A higher concentration of DCS:NH3 (i.e. 16:1), usually results in lower stress nitride films. It is an intermediate between silane and silicon tetrachloride. ==Physical properties== Graphs obtained show different properties of dichlorosilane. The vapor pressure vs. temperature graphs shows that as temperature increases, vapor pressure also increases. The gas vs. heat capacity graph shows that as temperature increases, gas heat capacity increases until it hits .24 Cal/GRx°C. The enthalpy of vaporization decreases as temperature decreases, until it reaches 0 at its critical point at 180 °C. Liquid heat capacity increases as temperature increases, until the critical point is reached. Liquid density decreases as temperature increases, until the critical point is reached. Surface tension decreases steadily as temperature increases, until the surface tension is at 0 when the critical point is reached. Liquid viscosity decreases as temperature increases, until the critical point is reached. Gas thermal conductivity increases as temperature increases. Liquid thermal conductivity decreases as temperature increases, until the critical point is reached. Enthalpy of formation decreases at first as temperature increases, but then it begins to increase around 750 °C. Gibbs energy of formation increases linearly as temperature increases.〔Cheng, J., Yaws, C., Dickens, L., Hopper, J., Physical and Thermodynamic Properties of Dichlorosilane, Department of Chemical Engineering, 23, 48-52〕 抄文引用元・出典: フリー百科事典『 ウィキペディア（Wikipedia）』 ■ウィキペディアで「dichlorosilane」の詳細全文を読む スポンサード リンク
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